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| Datasheet File OCR Text: |
| NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built-In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Collector Power Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Gain Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT Test Conditions VCB = 50V, IE = 0 VEB = 7V, IC = 0 IC = 5mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 500mA, f = 1MHz Min - - 50 2000 500 - - - Typ - - - - - - - 20 Max 100 2 70 5000 - 1.5 2.0 - V V MHz Unit A mA V Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Turn-On Time Storage Time Fall Time Energy Handling Capacity Symbol ton tstg tf Es/b IC = 1A, L = 100mH, RBE = 100 Test Conditions VCC = 50V, IC = 4A, IB1 = 8mA, IB2 = -8mA Min - - - 50 Typ 0.5 4 1 - Max - - - - Unit s s s mJ C B E .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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